HRXRD is a powerful non-destructive testing method, and its research objects are mainly single crystal materials, single crystal epitaxial thin film materials and various low-dimensional semiconductor heterostructures. It is widely used for the measurement of single crystal quality, thickness, cell parameters and other structural parameters of epitaxial films.
2theta/omega scanning is used to detect coherent scattering of atomic layers parallel to the surface and can be used to determine the composition of In, out-of-plane cell parameters, thickness and other parameters.
the 2theta/omega scanning pattern of the GaN (0002) crystal face
obvious superlattice swing peaks and thin film interference fringes between superlattice peaks.
RSM is an intuitive method to analyze the mismatches between thin films and substrates and the defects of thin films. Modern HRXRD using 1D detectors can greatly improve the test speed, fast acquisition of an RSM only takes tens of seconds.
The image is the result of a full spectrum fitting of the 2theta/omega scan. It can be seen that the fitting map is in good agreement with the test data. The content of In is an important parameter in the growth process. HRXRD is therefore a powerful tool for monitoring the deposition process.
